Vishay SIR878BDP-T1-RE3 MOSFETs
N-Channel MOSFET, 30V, 100A, 5.5mΩ
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR878BDP-T1-RE3
Detailed Description
N-Channel MOSFET, 30V, 100A, 5.5mΩ
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
SIR878BDP-T1-RE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIR878BDP-T1-RE3 MOSFETs technical specifications.
General
Series
TrenchFET® Gen IV
RoHS
Yes
Number of Pins
5
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Avalanche Energy Rating Eas
11.2 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
Alternate Parts Comparison (SIR878BDP-T1-RE3 vs SIR440DP-T1-GE3 vs SI7431DP-T1-GE3 vs SI7469ADP-T1-RE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® Gen IV | TrenchFET® | TrenchFET® | TrenchFET® Gen IV |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 12A (Ta), 42.5A (Tc) | 60A (Tc) | 2.2A (Ta) | 7.4A (Ta), 46A (Tc) |
| Drain to Source Voltage Vdss | 100 V | 20 V | -200 V | 80 V |
| Fet Type | N-Channel | N-Channel | P-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 38 nC @ 10 V | 150 nC @ 10 V | 135 nC @ 10 V | 65 nC @ 10 V |
| Rds on Max ID Vgs | 14.4mOhm @ 15A, 10V | 1.55mOhm @ 20A, 10V | 174mOhm @ 3.8A, 10V | 19.3mOhm @ 10A, 10V |
| Technology | MOSFET (Metal Oxide) | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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