Vishay SQJ457EP-T1_GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ457EP-T1_GE3
Base Model
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
SQJ457EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ457EP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Channels
1
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
36 A
Current Continuous Drain ID 25 C
36A (Tc)
Drain to Source Breakdown Voltage
60 V
Alternate Parts Comparison (SQJ457EP-T1_GE3 vs SQJ457EP-T1_BE3 vs SQJ403BEEP-T1_GE3 vs SQJ431EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | PowerPAK® SO-8 | PowerPAK SO | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | SMD/SMT |
| RoHS | Yes | Compliant | Non-Compliant | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Series | Automotive, AEC-Q101, TrenchFET® | -- | Automotive, AEC-Q101, TrenchFET® | SQ |
| Operating Temperature | -55°C ~ 175°C (TJ) | -- | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Current Continuous Drain ID 25 C | 36A (Tc) | -- | 30A (Tc) | 12A (Tc) |
| Drain to Source Voltage Vdss | 60 V | -- | 30 V | 200 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | -- | 4.5V, 10V | 6V, 10V |
| Fet Type | P-Channel | -- | P-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 100 nC @ 10 V | -- | 164 nC @ 10 V | 160 nC @ 10 V |
| Military Spec | No | -- | No | No |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
SQJ403BEEP-T1_GE3VishayPower Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET…
