Vishay SIDR170DP-T1-RE3 MOSFETs
MOSFET N-CH 100V 23.2A/95A PPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIDR170DP-T1-RE3
Detailed Description
MOSFET N-CH 100V 23.2A/95A PPAK
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
SIDR170DP-T1-RE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIDR170DP-T1-RE3 MOSFETs technical specifications.
General
Series
TrenchFET® Gen IV
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Current Continuous Drain ID 25 C
23.2A (Ta), 95A (Tc)
Alternate Parts Comparison (SIDR170DP-T1-RE3 vs SQJ403BEEP-T1_GE3 vs SI7431DP-T1-GE3 vs SI7469ADP-T1-RE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® Gen IV | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | TrenchFET® Gen IV |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | ROHS3 Compliant | Non-Compliant | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 23.2A (Ta), 95A (Tc) | 30A (Tc) | 2.2A (Ta) | 7.4A (Ta), 46A (Tc) |
| Drain to Source Voltage Vdss | 100 V | 30 V | -200 V | 80 V |
| Fet Type | N-Channel | P-Channel | P-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 140 nC @ 10 V | 164 nC @ 10 V | 135 nC @ 10 V | 65 nC @ 10 V |
| Rds on Max ID Vgs | 4.8mOhm @ 20A, 10V | 8.5mOhm @ 10A, 10V | 174mOhm @ 3.8A, 10V | 19.3mOhm @ 10A, 10V |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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