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Vishay SQJA64EP-T1_GE3 MOSFETs

MOSFET N-CH 60V 15A PPAK SO-8

198 ActiveVishayPowerPAK® SO-8$1.51
SQJA64EP-T1_GE3 PowerPAK® SO-8 package illustration

Same model may have multiple batches, images only for reference.

SQJA64EP-T1_GE3
Manufacturer
Part Number (MPN)
SQJA64EP-T1_GE3
Detailed Description
MOSFET N-CH 60V 15A PPAK SO-8
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
PDF SQJA64EP-T1_GE3 Datasheet
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Technical Specifications

Vishay SQJA64EP-T1_GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Continuous Drain Current ID
15 A

Alternate Parts Comparison (SQJA64EP-T1_GE3 vs SQJ403BEEP-T1_GE3 vs SIR878BDP-T1-RE3 vs SI7431DP-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesTrenchFET®Automotive, AEC-Q101, TrenchFET®TrenchFET® Gen IVTrenchFET®
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSROHS3 CompliantNon-CompliantYesYes
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C15A (Tc)30A (Tc)12A (Ta), 42.5A (Tc)2.2A (Ta)
Drain to Source Voltage Vdss60 V30 V100 V-200 V
Drive Voltage Max Rds on Min Rds on10 V4.5V, 10V7.5V, 10V6V, 10V
Fet TypeN-ChannelP-ChannelN-ChannelP-Channel
Gate Charge Qg Max Vgs12 nC @ 10 V164 nC @ 10 V38 nC @ 10 V135 nC @ 10 V
Rds on Max ID Vgs32mOhm @ 4A, 10V8.5mOhm @ 10A, 10V14.4mOhm @ 15A, 10V174mOhm @ 3.8A, 10V
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