Vishay SQJA60EP-T1_GE3 MOSFETs
Power Field-Effect Transistor, 24.6A I(D), 60V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJA60EP-T1_GE3
Base Model
Detailed Description
Power Field-Effect Transistor, 24.6A I(D), 60V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
SQJA60EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJA60EP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
Number of Pins
4
Number of Channels
1
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
30 A
Current Continuous Drain ID 25 C
30A (Tc)
Drain to Source Breakdown Voltage
60 V
Related Parts Comparison (SQJA60EP-T1_GE3 vs SQJA60EP-T1_BE3 vs SIDR170DP-T1-RE3 vs SQJ403BEEP-T1_GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | TrenchFET® Gen IV | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 Dual | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 30A (Tc) | 30A (Tc) | 23.2A (Ta), 95A (Tc) | 30A (Tc) |
| Drain to Source Voltage Vdss | 60 V | 60 V | 100 V | 30 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 30 nC @ 10 V | 30 nC @ 10 V | 140 nC @ 10 V | 164 nC @ 10 V |
| Power Dissipation Max | 45W (Tc) | 45W (Tc) | 6.25W (Ta), 125W (Tc) | 68W (Tc) |
| Rds on Max ID Vgs | 12.5mOhm @ 8A, 10V | 12.5mOhm @ 8A, 10V | 4.8mOhm @ 20A, 10V | 8.5mOhm @ 10A, 10V |
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SQJ403BEEP-T1_GE3VishayPower Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET…