Vishay SQJ860EP-T1_GE3 MOSFETs
Power Field-Effect Transistor, 36A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ860EP-T1_GE3
Detailed Description
Power Field-Effect Transistor, 36A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8L, 4 PIN
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
SQJ860EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ860EP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Non-Compliant
Number of Pins
4
Number of Channels
1
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
60 A
Current Continuous Drain ID 25 C
60A (Tc)
Alternate Parts Comparison (SQJ860EP-T1_GE3 vs SQJ403BEEP-T1_GE3 vs SQJ457EP-T1_GE3 vs SQJ431EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | SQ |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | SMD/SMT |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Non-Compliant | Non-Compliant | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 60A (Tc) | 30A (Tc) | 36A (Tc) | 12A (Tc) |
| Drain to Source Voltage Vdss | 40 V | 30 V | 60 V | 200 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 6V, 10V |
| Fet Type | N-Channel | P-Channel | P-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 55 nC @ 10 V | 164 nC @ 10 V | 100 nC @ 10 V | 160 nC @ 10 V |
| Military Spec | No | No | No | No |
| Action |
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SQJ403BEEP-T1_GE3VishayPower Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET…
