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Vishay SQJ463EP-T1_GE3 MOSFETs

Power Field-Effect Transistor, 11A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8, 4 PIN

3,000 ActiveVishayPowerPAK® SO-8$1.92
SQJ463EP-T1_GE3 PowerPAK® SO-8 package illustration

Same model may have multiple batches, images only for reference.

SQJ463EP-T1_GE3
Manufacturer
Part Number (MPN)
SQJ463EP-T1_GE3
Detailed Description
Power Field-Effect Transistor, 11A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8, 4 PIN
Package
PowerPAK® SO-8
Lifecycle Status
Active
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Technical Specifications

Vishay SQJ463EP-T1_GE3 MOSFETs technical specifications.

General

Series
SQ
RoHS
Yes
Number of Pins
8
Number of Channels
1 Channel
Package / Case
PowerPAK® SO-8
Mounting Type
SMD/SMT
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single

Alternate Parts Comparison (SQJ463EP-T1_GE3 vs SQJ403BEEP-T1_GE3 vs SQJ457EP-T1_GE3 vs SQJ158EP-T1_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesSQAutomotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®Automotive, AEC-Q101, TrenchFET®
Package / CasePowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8PowerPAK® SO-8
Mounting TypeSMD/SMTSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSYesNon-CompliantYesYes
Lifecycle StatusActiveActiveActiveActive
Current Continuous Drain ID 25 C30A (Tc)30A (Tc)36A (Tc)23A (Tc)
Drain to Source Voltage Vdss40 V30 V60 V60 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V4.5V, 10V4.5V, 10V4.5V, 10V
Fet TypeP-ChannelP-ChannelP-ChannelN-Channel
Gate Charge Qg Max Vgs150 nC @ 10 V164 nC @ 10 V100 nC @ 10 V30 nC @ 10 V
Military SpecNoNoNoNo
Action

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