Vishay SQJ443EP-T1_GE3 MOSFETs
Power Field-Effect Transistor, 40A I(D), 40V, 0.029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQJ443EP-T1_GE3
Base Model
Detailed Description
Power Field-Effect Transistor, 40A I(D), 40V, 0.029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
SQJ443EP-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQJ443EP-T1_GE3 MOSFETs technical specifications.
General
Series
Automotive, AEC-Q101, TrenchFET®
RoHS
Yes
Number of Pins
4
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TA)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
40A (Tc)
Drain to Source Voltage Vdss
40 V
Drive Voltage Max Rds on Min Rds on
4.5V, 10V
Alternate Parts Comparison (SQJ443EP-T1_GE3 vs SQJ443EP-T1_BE3 vs SQJ457EP-T1_GE3 vs SQJ431EP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | PowerPAK® SO-8 | PowerPAK SO | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | SMD/SMT |
| RoHS | Yes | Compliant | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Series | Automotive, AEC-Q101, TrenchFET® | -- | Automotive, AEC-Q101, TrenchFET® | SQ |
| Operating Temperature | -55°C ~ 175°C (TA) | -- | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Pins | 4 | 5 | -- | 6 |
| Current Continuous Drain ID 25 C | 40A (Tc) | -- | 36A (Tc) | 12A (Tc) |
| Drain to Source Voltage Vdss | 40 V | -- | 60 V | 200 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | -- | 4.5V, 10V | 6V, 10V |
| Fet Type | P-Channel | -- | P-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 57 nC @ 10 V | -- | 100 nC @ 10 V | 160 nC @ 10 V |
| Action |
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