Vishay SQD50N06-09L_GE3 MOSFETs
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQD50N06-09L_GE3
Base Model
Detailed Description
Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Lifecycle Status
Active
Datasheet
SQD50N06-09L_GE3 Datasheet
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Alternate Parts Comparison (SQD50N06-09L_GE3 vs SQD50N10-8M9L_GE3 vs SQD50N04-5M6_GE3 vs SQD50N04-5M6L_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | -- | SQD | SQD | TrenchFET® |
| Package / Case | -- | DPAK-3 | DPAK-3 | TO-252-3, DPAK |
| Mounting Type | -- | Surface Mount | SMD/SMT | Surface Mount |
| Operating Temperature | -- | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Lifecycle Status | -- | Obsolete | Active | Active |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Current Continuous Drain ID 25 C | -- | 50A (Tc) | 50A (Tc) | 50A (Tc) |
| Drain to Source Voltage Vdss | -- | 100 V | 40 V | 40 V |
| Drive Voltage Max Rds on Min Rds on | -- | 4.5V, 10V | 10 V | 4.5V, 10V |
| Fall Time | -- | 120 ns | 5 ns | 10 ns |
| Action |
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SQD50N06-09LVishayTRANSISTOR 50 A, 60 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FE…
