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Vishay SQD50N04-5M6L_GE3 MOSFETs

MOSFET N-CH 40V 50A TO252AA

2,000 ActiveVishaySQD50NTO-252-3, DPAK (2 Leads + Tab), SC-63$3.08
SQD50N04-5M6L_GE3 TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

SQD50N04-5M6L_GE3
Manufacturer
Part Number (MPN)
SQD50N04-5M6L_GE3
Base Model
Detailed Description
MOSFET N-CH 40V 50A TO252AA
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF SQD50N04-5M6L_GE3 Datasheet
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Ordering Code Family

SQD50N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

Vishay SQD50N04-5M6L_GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
RoHS Compliant
Number of Channels
1 Channel
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Current Continuous Drain ID 25 C
50A (Tc)

Alternate Parts Comparison (SQD50N04-5M6L_GE3 vs SQD50N06-09L vs SQD50N06-09L_GE3 vs SQD50N04-4M5L_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseTO-252-3, DPAK----TO-252
Mounting TypeSurface Mount----Surface Mount
Operating Temperature-55°C ~ 175°C (TJ)-----55°C ~ 175°C (TJ)
RoHSRoHS Compliant----Yes
Lifecycle StatusActive----Active
Current Continuous Drain ID 25 C50A (Tc)----50A (Tc)
Drain to Source Voltage Vdss40 V----40 V
Drive Voltage Max Rds on Min Rds on4.5V, 10V----4.5V, 10V
Fall Time10 ns----11 ns
Fet TypeN-Channel----N-Channel
Gate Charge Qg Max Vgs75 nC @ 10 V----130 nC @ 10 V
Input Capacitance Ciss Max Vds4000 pF @ 25 V----5860 pF @ 25 V
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