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Vishay SQD50N04-5M6_GE3 MOSFETs

MOSFETs N-Channel 40V AEC-Q101 Qualified

535 ActiveVishaySQD50NDPAK-3 (TO-252-3)$1.56
SQD50N04-5M6_GE3 DPAK-3 (TO-252-3) package illustration

Same model may have multiple batches, images only for reference.

SQD50N04-5M6_GE3
Manufacturer
Part Number (MPN)
SQD50N04-5M6_GE3
Base Model
Detailed Description
MOSFETs N-Channel 40V AEC-Q101 Qualified
Package
DPAK-3 (TO-252-3)
Lifecycle Status
Active
Datasheet
PDF SQD50N04-5M6_GE3 Datasheet
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Ordering Code Family

SQD50N groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

6 ordering variants listed on the family page.

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Technical Specifications

Vishay SQD50N04-5M6_GE3 MOSFETs technical specifications.

General

Series
SQD
RoHS
RoHS Compliant
Number of Channels
1 Channel
Package / Case
DPAK-3
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single

Alternate Parts Comparison (SQD50N04-5M6_GE3 vs SQD50N06-09L vs SQD50N06-09L_GE3 vs SQD50N04-4M5L_GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseDPAK-3----TO-252
Mounting TypeSMD/SMT----Surface Mount
Operating Temperature-55°C ~ 175°C (TJ)-----55°C ~ 175°C (TJ)
RoHSRoHS Compliant----Yes
Lifecycle StatusActive----Active
Continuous Drain Current ID50 A----50 A
Current Continuous Drain ID 25 C50A (Tc)----50A (Tc)
Drain to Source Voltage Vdss40 V----40 V
Drive Voltage Max Rds on Min Rds on10 V----4.5V, 10V
Fall Time5 ns----11 ns
Fet TypeN-Channel----N-Channel
Gate Charge Qg Max Vgs85 nC @ 10 V----130 nC @ 10 V
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