Vishay SQ4940AEY-T1_BE3 MOSFETs
MOSFETs Dual N-CHANNEL 40 V
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ4940AEY-T1_BE3
Detailed Description
MOSFETs Dual N-CHANNEL 40 V
Package
SOIC-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SQ4940AEY-T1_BE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
RoHS Compliant
Number of Channels
2 Channel
Package / Case
SOIC-8
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Current Continuous Drain ID 25 C
8A (Tc)
Alternate Parts Comparison (SQ4940AEY-T1_BE3 vs SI4840BDY-T1-GE3 vs SI4936CDY-T1-GE3 vs SI4835DDY-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQ | SI4 | SI4 | SI4 |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 2 Channel | 1 Channel | 2 Channel | 1 Channel |
| RoHS | RoHS Compliant | Yes | Yes | Yes |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | 8 A | 19 A | 5.8 A | 13 A |
| Pd Power Dissipation | 4 W | 6 W | 2.3 W | 5.6 W |
| Qg Gate Charge | 43 nC | 50 nC | 9 nC | 65 nC |
| Rds on Drain Source Resistance | 20 mOhms, 20 mOhms | 9 mOhms | 40 mOhms | 30 mOhms |
| Technology | Si | Si | Si | Si |
| Trade Name | TrenchFET | TrenchFET | TrenchFET | TrenchFET |
| Transistor Polarity | N-Channel | N-Channel | N-Channel | P-Channel |
| Action |
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