Vishay SI4401DDY-T1-GE3 MOSFETs
P-CH MOSFET, -40V, -16.1A, 15mR Rds On, SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4401DDY-T1-GE3
Base Model
Detailed Description
P-CH MOSFET, -40V, -16.1A, 15mR Rds On, SOIC
Package
SOIC-8
Lifecycle Status
Active
Datasheet
SI4401DDY-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI4401DDY-T1-GE3 MOSFETs technical specifications.
General
Series
SI4
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
40 V
ID Continuous Drain Current
16.1 A
Rds on Drain Source Resistance
15 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI4401DDY-T1-GE3 vs SI4401DDY vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD (SMT) | Surface Mount | Surface Mount |
| Package | SOIC-8 | Reel - TR | UFBGA-4 | UFBGA-4 |
| RoHS | Yes | -- | Yes | Yes |
| Package / Case | -- | Reel - TR | 4-UFBGA | 4-UFBGA |
| Lifecycle Status | -- | Active | Active | Active |
| Action |
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