Vishay SI4850EY-T1-GE3 MOSFETs
N-Channel JFET, 60V, 6A, 22mR Rds(on), SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4850EY-T1-GE3
Base Model
Detailed Description
N-Channel JFET, 60V, 6A, 22mR Rds(on), SOIC
Package
SOIC-8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SI4850EY-T1-GE3 MOSFETs technical specifications.
General
Series
SI4
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
8.5 A
Rds on Drain Source Resistance
22 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI4850EY-T1-GE3 vs SI4850EY-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC-8 | SOIC-8 | UFBGA-4 | UFBGA-4 |
| Series | SI4 | SI4 | SIP324x1 | -- |
| Maximum Operating Temperature C | + 175 | + 175 | + 85 | -- |
| Minimum Operating Temperature C | - 55 | - 55 | - 40 | -- |
| Pd Power Dissipation | 3.3 W | 3.3 W | 300 mW | -- |
| Unit Weight | 0.002610 oz | 0.002610 oz | 0.002420 oz | -- |
| Action |
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