Vishay SI9407BDY-T1-GE3 MOSFETs
P-CH JFET, 60V, 3.2A, 120mR, SOIC-8, Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI9407BDY-T1-GE3
Base Model
Detailed Description
P-CH JFET, 60V, 3.2A, 120mR, SOIC-8, Surface Mount
Package
SOIC-8
Lifecycle Status
Active
Datasheet
SI9407BDY-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI9407BDY-T1-GE3 MOSFETs technical specifications.
General
Series
SI9
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
4.7 A
Rds on Drain Source Resistance
120 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI9407BDY-T1-GE3 vs SI9407BDY-T1-E3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC-8 | SOIC-8 | UFBGA-4 | UFBGA-4 |
| Series | SI9 | SI9 | SIP324x1 | -- |
| Maximum Operating Temperature C | + 150 | + 150 | + 85 | -- |
| Minimum Operating Temperature C | - 55 | - 55 | - 40 | -- |
| Pd Power Dissipation | 5 W | 5 W | 300 mW | -- |
| Unit Weight | 0.026455 oz | 0.026455 oz | 0.002420 oz | -- |
| Action |
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