Vishay SQ4917CEY-T1_GE3 MOSFETs
MOSFETs Automotive Dual P-Channel 60V 175CmOSFET 48mO 10V, 61.2mO 4.5V
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ4917CEY-T1_GE3
Detailed Description
MOSFETs Automotive Dual P-Channel 60V 175CmOSFET 48mO 10V, 61.2mO 4.5V
Package
SO-8
Lifecycle Status
Active
Datasheet
SQ4917CEY-T1_GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQ4917CEY-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
RoHS Compliant
Number of Channels
2 Channel
Package / Case
SO-8
Packaging
Reel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Channel Mode
Enhancement
Fall Time
5 ns
Forward Transconductance Min
12 S
Alternate Parts Comparison (SQ4917CEY-T1_GE3 vs SI4178DY-T1-E3 vs SIR472DP-T1-GE3 vs SIR496DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | RoHS Compliant | Yes | Yes | Yes |
| Series | SQ | -- | SIR | TrenchFET® |
| Technology | Si | -- | Si | MOSFET (Metal Oxide) |
| Mounting Type | SMD/SMT | -- | -- | Surface Mount |
| Operating Temperature | - 55°C ~ + 175°C | -- | -- | -55°C ~ 150°C (TJ) |
| Package / Case | SO-8 | -- | -- | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Fall Time | 5 ns | -- | -- | -- |
| Forward Transconductance Min | 12 S | -- | -- | -- |
| ID Continuous Drain Current | 8 A | -- | -- | -- |
| Pd Power Dissipation | 5 W | -- | -- | -- |
| Action |
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