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Vishay SI7366DP-T1-GE3 MOSFETs

MOSFET N-CH 20V 13A PPAK SO-8

50VishaySO-8$0.43
SI7366DP-T1-GE3 SO-8 package illustration

Same model may have multiple batches, images only for reference.

SI7366DP-T1-GE3
Manufacturer
Part Number (MPN)
SI7366DP-T1-GE3
Detailed Description
MOSFET N-CH 20V 13A PPAK SO-8
Package
SO-8
Lifecycle Status
Obsolete
Datasheet
PDF SI7366DP-T1-GE3 Datasheet
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Technical Specifications

Vishay SI7366DP-T1-GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage Vdss
20 V
Current Continuous Drain ID 25 C
13A (Ta)
Drive Voltage Max Rds on Min Rds on
4.5V, 10V

Alternate Parts Comparison (SI7366DP-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
RoHSYesYesYesYes
Lifecycle StatusObsoleteActiveActiveActive
PackageSO-8UFBGA-4UFBGA-44-UFDFNExposedPad
SeriesTrenchFET®SIP324x1--SIP324x1
Package / Case--4-UFBGA4-UFBGA4-UFDFN Exposed Pad
Supply Voltage--Not RequiredNot RequiredNot Required
Interface--On/OffOn/OffOn/Off
Current Output Max--1.2A1.2A2.4A
Fault Protection--Reverse CurrentReverse CurrentReverse Current
Features--Slew Rate ControlledLoad Discharge, Slew Rate ControlledSlew Rate Controlled
Action

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