Vishay SIR496DP-T1-GE3 MOSFETs
MOSFET N-CH 20V 35A PPAK SO-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR496DP-T1-GE3
Detailed Description
MOSFET N-CH 20V 35A PPAK SO-8
Package
SO-8
Lifecycle Status
Obsolete
Datasheet
SIR496DP-T1-GE3 Datasheet
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Technical Specifications
Vishay SIR496DP-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Obsolete
Fet Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage Vdss
20 V
Current Continuous Drain ID 25 C
35A (Tc)
Drive Voltage Max Rds on Min Rds on
4.5V, 10V
Alternate Parts Comparison (SIR496DP-T1-GE3 vs SIR626ADP-T1-RE3 vs SIR680ADP-T1-RE3 vs SIR472DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SO-8 | SO-8 | SO-8 | SO-8 |
| Series | TrenchFET® | -- | -- | SIR |
| Technology | MOSFET (Metal Oxide) | -- | -- | Si |
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | -- | -- |
| Lifecycle Status | Obsolete | -- | -- | -- |
| Current Continuous Drain ID 25 C | 35A (Tc) | -- | -- | -- |
| Drain to Source Voltage Vdss | 20 V | -- | -- | -- |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | -- | -- | -- |
| Fet Type | N-Channel | -- | -- | -- |
| Gate Charge Qg Max Vgs | 42 nC @ 10 V | -- | -- | -- |
| Action |
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