Vishay SI4178DY-T1-E3 MOSFETs
MOSFET N-CH 30V 12A 8SO
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4178DY-T1-E3
Base Model
Detailed Description
MOSFET N-CH 30V 12A 8SO
Package
SO-8
Lifecycle Status
Active
Datasheet
SI4178DY-T1-E3 Datasheet
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Technical Specifications
Vishay SI4178DY-T1-E3 MOSFETs technical specifications.
General
RoHS
Yes
Feature Process Technology
TrenchFET
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
30
Feature Maximum Gate Source Voltage V
±25
Feature Maximum Gate Threshold Voltage V
2.8
Feature Maximum Continuous Drain Current a
12
Alternate Parts Comparison (SI4178DY-T1-E3 vs SI4178DY-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SO-8 | -- | UFBGA-4 | UFBGA-4 |
| Package / Case | -- | SOIC | 4-UFBGA | 4-UFBGA |
| Mounting Type | -- | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | -40°C ~ 85°C (TA) | -40°C ~ 125°C (TJ) |
| Lifecycle Status | -- | Active | Active | Active |
| Action |
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