Vishay SQ3426AEEV-T1_BE3 MOSFETs
MOSFET N-CH 60V 7A 6TSOP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ3426AEEV-T1_BE3
Base Model
Detailed Description
MOSFET N-CH 60V 7A 6TSOP
Package
SOT-23-6 Thin, TSOT-23-6
Lifecycle Status
Active
Datasheet
SQ3426AEEV-T1_BE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SQ3426AEEV-T1_BE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Current Continuous Drain ID 25 C
7A (Tc)
Drain to Source Voltage Vdss
60 V
Alternate Parts Comparison (SQ3426AEEV-T1_BE3 vs SQ3426AEEV-T1_GE3 vs SQ3585EV-T1_GE3 vs SQ2308CES-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | SMD/SMT | SMD/SMT |
| RoHS | ROHS3 Compliant | Yes | Yes | Yes |
| Fall Time | 4 ns | 4 ns | 8 ns, 14 ns | 12 ns |
| Rise Time | 10 ns | 10 ns | 15 ns, 16 ns | 9 ns |
| Series | TrenchFET® | -- | SQ | SQ |
| Number of Channels | 1 Channel | -- | 2 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| ID Continuous Drain Current | 7 A | -- | 3.57 A, 2.5 A | 2.3 A |
| Pd Power Dissipation | 5 W | -- | 1.67 W | 2 W |
| Qg Gate Charge | 11.5 nC | -- | 2.5 nC, 3.5 nC | 5.3 nC |
| Qualification | AEC-Q101 | -- | AEC-Q101 | AEC-Q101 |
| Rds on Drain Source Resistance | 32 mOhms | -- | 49 mOhms, 140 mOhms | 150 mOhms |
| Action |
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