Vishay SQ3585EV-T1_GE3 MOSFETs
Trans MOSFET N/P-CH 20V 3.57A/2.5A Automotive AEC-Q101 6-Pin TSOP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ3585EV-T1_GE3
Detailed Description
Trans MOSFET N/P-CH 20V 3.57A/2.5A Automotive AEC-Q101 6-Pin TSOP T/R
Package
TSOP-6
Lifecycle Status
Active
Datasheet
SQ3585EV-T1_GE3 Datasheet
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Technical Specifications
Vishay SQ3585EV-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel, P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
3.57 A, 2.5 A
Rds on Drain Source Resistance
49 mOhms, 140 mOhms
Vgs Gate Source Voltage
- 12 V, + 12 V
Related Parts Comparison (SQ3585EV-T1_GE3 vs SQ3427AEEV-T1_GE3 vs SI3443CDV-T1-BE3 vs SI3456DDV-T1-E3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TSOP-6 | TSOP-6 | TSOP-6 | TSOP-6 |
| Series | SQ | SQ | -- | SI3 |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 2 Channel | 1 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Dual | Single | -- | Single |
| ID Continuous Drain Current | 3.57 A, 2.5 A | 5.3 A | -- | 6.3 A |
| Pd Power Dissipation | 1.67 W | 5 W | -- | 2.7 W |
| Qg Gate Charge | 2.5 nC, 3.5 nC | 15.3 nC | -- | 9 nC |
| Rds on Drain Source Resistance | 49 mOhms, 140 mOhms | 95 mOhms | -- | 40 mOhms |
| Technology | Si | Si | -- | Si |
| Action |
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