Vishay SQ2308CES-T1_GE3 MOSFETs
Small Signal Field-Effect Transistor, 2.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SQ2308CES-T1_GE3
Base Model
Detailed Description
Small Signal Field-Effect Transistor, 2.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Package
SOT23-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
Quick Jump:
Technical Specifications
Vishay SQ2308CES-T1_GE3 MOSFETs technical specifications.
General
Series
SQ
RoHS
True
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
2.3 A
Rds on Drain Source Resistance
150 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SQ2308CES-T1_GE3 vs SQ2308CES-T1_BE3 vs SI2316BDS-T1-E3 vs SI2333DS-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SQ | Automotive, AEC-Q101, TrenchFET® | SI2 | SI2 |
| Mounting Type | SMD/SMT | Surface Mount | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| RoHS | True | Compliant | True | True |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single | Single | Single |
| Fall Time | 12 ns | -- | 7 ns | 60 ns |
| ID Continuous Drain Current | 2.3 A | -- | 4.5 A | 4.1 A |
| Package | SOT23-3 | -- | SOT23-3 | SOT23-3 |
| Pd Power Dissipation | 2 W | -- | 1.66 W | 750 mW |
| Qg Gate Charge | 5.3 nC | -- | 3.16 nC | 11.5 nC |
| Rds on Drain Source Resistance | 150 mOhms | -- | 50 mOhms | 32 mOhms |
| Action |
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