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Vishay SQ3419AEEV-T1_GE3 MOSFETs

MOSFET P-CHANNEL 40V 6.9A 6TSOP

39 ActiveVishaySOT-23-6 Thin, TSOT-23-6$1.64
SQ3419AEEV-T1_GE3 SOT-23-6 Thin, TSOT-23-6 package illustration

Same model may have multiple batches, images only for reference.

SQ3419AEEV-T1_GE3
Manufacturer
Part Number (MPN)
SQ3419AEEV-T1_GE3
Detailed Description
MOSFET P-CHANNEL 40V 6.9A 6TSOP
Package
SOT-23-6 Thin, TSOT-23-6
Lifecycle Status
Active
Datasheet
PDF SQ3419AEEV-T1_GE3 Datasheet
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Technical Specifications

Vishay SQ3419AEEV-T1_GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
ROHS3 Compliant
Number of Channels
1 Channel
Package / Case
SOT-23-6 Thin, TSOT-23-6
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 175°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Continuous Drain Current ID
6.9 A

Alternate Parts Comparison (SQ3419AEEV-T1_GE3 vs SQ3426EEV-T1-GE3 vs SQ3418AEEV-T1_BE3 vs SQ3426AEEV-T1_BE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseSOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6SOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)-55 °C ~ 175 °C-55°C ~ 175°C (TJ)-55°C ~ 175°C (TJ)
RoHSROHS3 CompliantROHS3 CompliantRoHS CompliantROHS3 Compliant
Lifecycle StatusActiveObsoleteActiveActive
Current Continuous Drain ID 25 C6.9A (Tc)7A (Tc)8A (Tc)7A (Tc)
Drain to Source Voltage Vdss40 V60 V40 V60 V
Fall Time31 ns7 ns37 ns4 ns
Fet TypeP-ChannelN-ChannelN-ChannelN-Channel
Gate Charge Qg Max Vgs12.5 nC @ 4.5 V12 nC @ 4.5 V12.4 nC @ 10 V14 nC @ 10 V
Input Capacitance Ciss Max Vds975 pF @ 20 V700 pF @ 30 V675 pF @ 20 V1100 pF @ 30 V
Moisture Sensitivity Level MSL1 (Unlimited)1 (Unlimited)1 (Unlimited)1 (Unlimited)
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