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Vishay SIZ988DT-T1-GE3 MOSFETs

Power Field-Effect Transistor,

70 ActiveVishay8-PowerPair®$2.66
SIZ988DT-T1-GE3 8-PowerPair® package illustration

Same model may have multiple batches, images only for reference.

SIZ988DT-T1-GE3
Manufacturer
Part Number (MPN)
SIZ988DT-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
8-PowerPair®
Lifecycle Status
Active
Datasheet
PDF SIZ988DT-T1-GE3 Datasheet
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Technical Specifications

Vishay SIZ988DT-T1-GE3 MOSFETs technical specifications.

General

Series
TrenchFET®
RoHS
Yes
Package / Case
8-PowerPair®
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
40A (Tc), 60A (Tc)
Drain to Source Voltage Vdss
30 V
Fet Feature
Standard
Fet Type
2 N-Channel (Dual)

Alternate Parts Comparison (SIZ988DT-T1-GE3 vs SIZ260DT-T1-GE3 vs SIZ998DT-T1-GE3 vs SIZ340ADT-T1-GE3)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
SeriesTrenchFET®TrenchFET® Gen IVSIZSiZ340ADT
Package / Case8-PowerPair®Tape and ReelTape and ReelTape and Reel
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)
RoHSYesCompliant with ExemptionCompliantCompliant
Lifecycle StatusActiveActiveActiveObsolete
Current Continuous Drain ID 25 C40A (Tc), 60A (Tc)8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc)20A (Tc), 60A (Tc)15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc)
Drain to Source Voltage Vdss30 V80 V30 V30 V
Fet FeatureStandardStandardStandardStandard
Fet Type2 N-Channel (Dual)2 N-Channel (Dual)2 N-Channel (Dual), Schottky2 N-Channel (Dual)
Gate Charge Qg Max Vgs10.5nC @ 4.5V, 23.1nC @ 4.5V27nC @ 10V8.1nC @ 4.5V, 19.8nC @ 4.5V12.2nC @ 10V, 27.9nC @ 10V
Input Capacitance Ciss Max Vds1000pF @ 15V, 2425pF @ 15V820pF @ 40V930pF @ 15V, 2620pF @ 15V580pF @ 15V, 1290pF @ 15V
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