Vishay SIZ980DT-T1-GE3 MOSFETs
Power Field-Effect Transistor, 20A I(D), 30V, 0.0067ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIZ980DT-T1-GE3
Detailed Description
Power Field-Effect Transistor, 20A I(D), 30V, 0.0067ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Package
8-PowerPair®
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SIZ980DT-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Pins
6
Package / Case
8-PowerPair®
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Current Continuous Drain ID 25 C
20A (Tc), 60A (Tc)
Drain to Source Resistance
1.1mO
Drain to Source Voltage Vdss
30 V
Alternate Parts Comparison (SIZ980DT-T1-GE3 vs SIZ240DT-T1-GE3 vs SIZ260DT-T1-GE3 vs SIZ340ADT-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | TrenchFET® Gen IV | TrenchFET® Gen IV | SiZ340ADT |
| Package / Case | 8-PowerPair® | 8-PowerWDFN | Tape and Reel | Tape and Reel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| RoHS | Yes | ROHS3 Compliant | Compliant with Exemption | Compliant |
| Lifecycle Status | Active | Active | Active | Obsolete |
| Current Continuous Drain ID 25 C | 20A (Tc), 60A (Tc) | 17.2A (Ta), 48A (Tc), 16.9A (Ta), 47A (Tc) | 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) | 15.7A (Ta), 33.4A (Tc), 25.4A (Ta), 69.7A (Tc) |
| Drain to Source Voltage Vdss | 30 V | 40 V | 80 V | 30 V |
| Fet Feature | Standard | Standard | Standard | Standard |
| Fet Type | 2 N-Channel (Dual), Schottky | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Gate Charge Qg Max Vgs | 8.1nC @ 4.5V, 35nC @ 4.5V | 23nC @ 10V, 22nC @ 10V | 27nC @ 10V | 12.2nC @ 10V, 27.9nC @ 10V |
| Input Capacitance Ciss Max Vds | 930pF @ 15V, 4600pF @ 15V | 1180pF @ 20V, 1070pF @ 20V | 820pF @ 40V | 580pF @ 15V, 1290pF @ 15V |
| Action |
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