Vishay SISF00DN-T1-GE3 MOSFETs
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK 1212-SCD T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISF00DN-T1-GE3
Detailed Description
Trans MOSFET N-CH 30V 60A 8-Pin PowerPAK 1212-SCD T/R
Package
PowerPAK 1212-SCD
Lifecycle Status
Active
Datasheet
SISF00DN-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SISF00DN-T1-GE3 MOSFETs technical specifications.
General
Series
SISF
RoHS
Compliant
Number of Pins
8
Number of Channels
2 Channel
Package / Case
Tape and Reel
Packaging
Tape and Reel
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Automotive
No
Alternate Parts Comparison (SISF00DN-T1-GE3 vs SISF20DN-T1-GE3 vs SISF04DN-T1-GE3 vs SI4894BDY-T1-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Compliant | Yes | Yes | Yes |
| Mounting Type | Surface Mount | -- | SMD/SMT | SMD/SMT |
| Operating Temperature | -55°C ~ 150°C (TJ) | -- | - 55°C ~ + 150°C | - 55°C ~ + 150°C |
| Number of Channels | 2 Channel | -- | 2 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Dual Common Drain Dual Source | -- | Dual | Single |
| ID Continuous Drain Current | 60 A | -- | 108 A | 12 A |
| Pd Power Dissipation | 69.4 W | -- | 69.4 W | 2.5 W |
| Qg Gate Charge | 53 nC | -- | 40 nC | 20 nC |
| Rds on Drain Source Resistance | 4.2 mOhms | -- | 4 mOhms | 11 mOhms |
| Technology | Si | -- | Si | Si |
| Trade Name | TrenchFET, PowerPAK | -- | TrenchFET | TrenchFET |
| Action |
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