Vishay SISF04DN-T1-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SISF04DN-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK-1212-8
Lifecycle Status
Active
Datasheet
SISF04DN-T1-GE3 Datasheet
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Technical Specifications
Vishay SISF04DN-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
108 A
Rds on Drain Source Resistance
4 mOhms
Vgs Gate Source Voltage
- 12 V, + 16 V
Alternate Parts Comparison (SISF04DN-T1-GE3 vs SI7114DN-T1-GE3 vs SI7106DN-T1-GE3 vs SIS782DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 | PowerPAK-1212-8 |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 2 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Dual | -- | -- | -- |
| Fall Time | 6 ns | -- | -- | -- |
| Forward Transconductance Min | 115 S | -- | -- | -- |
| ID Continuous Drain Current | 108 A | -- | -- | -- |
| Pd Power Dissipation | 69.4 W | -- | -- | -- |
| Qg Gate Charge | 40 nC | -- | -- | -- |
| Action |
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