Vishay SIS402DN-T1-GE3 MOSFETs
N-Ch MOSFET, 30V, 6.4mR, 35A, Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIS402DN-T1-GE3
Detailed Description
N-Ch MOSFET, 30V, 6.4mR, 35A, Surface Mount
Package
PowerPAK-8
Lifecycle Status
Active
Datasheet
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Technical Specifications
Vishay SIS402DN-T1-GE3 MOSFETs technical specifications.
General
Series
SIS
RoHS
True
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
35 A
Rds on Drain Source Resistance
6 mOhms
Alternate Parts Comparison (SIS402DN-T1-GE3 vs SIS407ADN-T1-GE3 vs SIS438DN-T1-GE3 vs SIR866DP-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | True | True | True | True |
| Package | PowerPAK-8 | PowerPAK-1212-8 | POWERPAK-8 | PowerPAK-8 |
| Series | SIS | SIS | SIS | -- |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| ID Continuous Drain Current | 35 A | 18 A | 16 A | -- |
| Pd Power Dissipation | 52 W | 39.1 W | 27.7 W | -- |
| Qg Gate Charge | 42 nC | 112 nC | 23 nC | -- |
| Rds on Drain Source Resistance | 6 mOhms | 9 mOhms | 9.5 mOhms | -- |
| Technology | Si | Si | Si | -- |
| Action |
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