Vishay SIR866DP-T1-GE3 MOSFETs
N-Channel MOSFET, 20V, 60A, 1.9mR, Surface Mount, PowerPAK-SO-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR866DP-T1-GE3
Detailed Description
N-Channel MOSFET, 20V, 60A, 1.9mR, Surface Mount, PowerPAK-SO-8
Package
PowerPAK-8
Lifecycle Status
Active
Datasheet
SIR866DP-T1-GE3 Datasheet
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Technical Specifications
Vishay SIR866DP-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Feature Process Technology
TrenchFET
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
N
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
20
Feature Maximum Gate Source Voltage V
±20
Feature Maximum Continuous Drain Current a
60
Feature Maximum Drain Source Resistance Mohm
1.9@10V
Alternate Parts Comparison (SIR866DP-T1-GE3 vs SIR104LDP-T1-RE3 vs SI7114ADN-T1-GE3 vs SI7212DN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | PowerPAK-8 | POWERPAK-8 | PowerPAK-8 | POWERPAK-8 |
| Series | -- | SIR | SI7 | SI7 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | -- | 1 Channel | 1 Channel | 2 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| ID Continuous Drain Current | -- | 81 A | 35 A | 6.8 A |
| Pd Power Dissipation | -- | 100 W | 39 W | 2.6 W |
| Qg Gate Charge | -- | 73 nC | 21 nC | 11 nC |
| Rds on Drain Source Resistance | -- | 6.1 mOhms | 7.5 mOhms | 36 mOhms |
| Technology | -- | Si | Si | Si |
| Trade Name | -- | PowerPAK | TrenchFET | TrenchFET |
| Action |
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