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Vishay SI7123DN-T1-GE3 MOSFETs

MOSFET P-CH 20V 10.2A PPAK1212-8

1 ActiveVishayPowerPAK-8$3.16
SI7123DN-T1-GE3 PowerPAK-8 package illustration

Same model may have multiple batches, images only for reference.

SI7123DN-T1-GE3
Manufacturer
Part Number (MPN)
SI7123DN-T1-GE3
Detailed Description
MOSFET P-CH 20V 10.2A PPAK1212-8
Package
PowerPAK-8
Lifecycle Status
Active
Datasheet
PDF SI7123DN-T1-GE3 Datasheet
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Technical Specifications

Vishay SI7123DN-T1-GE3 MOSFETs technical specifications.

General

RoHS
Yes
Feature Process Technology
TrenchFET
Feature Configuration
Single Quad Drain Triple Source
Feature Channel Mode
Enhancement
Feature Channel Type
P
Feature Number of Elements Per Chip
1
Feature Maximum Drain Source Voltage V
20
Feature Maximum Gate Source Voltage V
±8
Feature Maximum Continuous Drain Current a
16
Feature Maximum Drain Source Resistance Mohm
10.6@4.5V

Alternate Parts Comparison (SI7123DN-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1 vs SIP32401ADNP-T1GE4)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
RoHSYesYesYesYes
PackagePowerPAK-8UFBGA-4UFBGA-44-UFDFNExposedPad
Package / Case--4-UFBGA4-UFBGA4-UFDFN Exposed Pad
Mounting Type--Surface MountSurface MountSurface Mount
Operating Temperature---40°C ~ 85°C (TA)-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)
Supply Voltage--Not RequiredNot RequiredNot Required
Interface--On/OffOn/OffOn/Off
Lifecycle Status--ActiveActiveActive
Current Output Max--1.2A1.2A2.4A
Fault Protection--Reverse CurrentReverse CurrentReverse Current
Features--Slew Rate ControlledLoad Discharge, Slew Rate ControlledSlew Rate Controlled
Input Type--Non-InvertingNon-InvertingNon-Inverting
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