Vishay SIR104LDP-T1-RE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR104LDP-T1-RE3
Detailed Description
Power Field-Effect Transistor,
Package
POWERPAK-8
Lifecycle Status
Active
Datasheet
SIR104LDP-T1-RE3 Datasheet
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Technical Specifications
Vishay SIR104LDP-T1-RE3 MOSFETs technical specifications.
General
Series
SIR
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
100 V
ID Continuous Drain Current
81 A
Rds on Drain Source Resistance
6.1 mOhms
Alternate Parts Comparison (SIR104LDP-T1-RE3 vs SIR866DP-T1-GE3 vs SI7123DN-T1-GE3 vs SI7114ADN-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | POWERPAK-8 | PowerPAK-8 | PowerPAK-8 | PowerPAK-8 |
| Series | SIR | -- | -- | SI7 |
| Mounting Type | SMD/SMT | -- | -- | SMD/SMT |
| Number of Channels | 1 Channel | -- | -- | 1 Channel |
| Channel Mode | Enhancement | -- | -- | Enhancement |
| ID Continuous Drain Current | 81 A | -- | -- | 35 A |
| Pd Power Dissipation | 100 W | -- | -- | 39 W |
| Qg Gate Charge | 73 nC | -- | -- | 21 nC |
| Rds on Drain Source Resistance | 6.1 mOhms | -- | -- | 7.5 mOhms |
| Technology | Si | -- | -- | Si |
| Trade Name | PowerPAK | -- | -- | TrenchFET |
| Action |
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