Vishay SIR4606DP-T1-GE3 MOSFETs
Trans MOSFET N-CH 60V 10.5A 8-Pin PowerPAK SO EP T/R
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR4606DP-T1-GE3
Detailed Description
Trans MOSFET N-CH 60V 10.5A 8-Pin PowerPAK SO EP T/R
Package
PowerPAK SO-8
Lifecycle Status
Active
Datasheet
SIR4606DP-T1-GE3 Datasheet
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Technical Specifications
Vishay SIR4606DP-T1-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 175°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
40 A
Rds on Drain Source Resistance
4.9 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SIR4606DP-T1-GE3 vs SIR1309DP-T1-GE3 vs SIR878BDP-T1-RE3 vs SIR570DP-T1-RE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Compliant |
| Mounting Type | SMD/SMT | -- | Surface Mount | Surface Mount |
| Operating Temperature | - 55°C ~ + 175°C | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Configuration | Single | -- | SINGLE WITH BUILT-IN DIODE | Single Quad Drain Triple Source |
| Technology | Si | -- | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Action |
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