Vishay SIR690DP-T1-GE3 MOSFETs
Power Field-Effect Transistor [PowerPAK SO-8 | Active | RoHS Compliant].
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR690DP-T1-GE3
Detailed Description
Power Field-Effect Transistor,
Package
PowerPAK SO-8
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
SIR690DP-T1-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIR690DP-T1-GE3 MOSFETs technical specifications.
General
Series
SIR
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
200 V
ID Continuous Drain Current
34.4 A
Rds on Drain Source Resistance
35 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SIR690DP-T1-GE3 vs SIR1309DP-T1-GE3 vs SIR4606DP-T1-GE3 vs SIR681DP-T1-RE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | QFN8 | PowerPAK SO-8 | PowerPAK SO-8 | PowerPAK SO-8 |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 6 ns | -- | 12 ns | 14 ns, 47 ns |
| ID Continuous Drain Current | 34.4 A | -- | 40 A | 71.9 A |
| Pd Power Dissipation | 104 W | -- | 48 W | 104 W |
| Qg Gate Charge | 31.9 nC | -- | 54 nC | 31.7 nC |
| Rds on Drain Source Resistance | 35 mOhms | -- | 4.9 mOhms | 11.2 mOhms |
| Rise Time | 19 ns | -- | 9 ns | 11 ns, 91 ns |
| Action |
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