Vishay SIR158DP-T1-GE3 MOSFETs
30V 40A N-CH MOSFET, 1.8mR Rds On, PPAK SO-8
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIR158DP-T1-GE3
Detailed Description
30V 40A N-CH MOSFET, 1.8mR Rds On, PPAK SO-8
Package
PowerPAK® SO-8
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SIR158DP-T1-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Channels
1
Package / Case
PowerPAK® SO-8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Channel Mode
Enhancement
Configuration
Single
Continuous Drain Current ID
40 A
Alternate Parts Comparison (SIR158DP-T1-GE3 vs SIR878BDP-T1-RE3 vs SIR440DP-T1-GE3 vs SQJ403BEEP-T1_GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | TrenchFET® Gen IV | TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| RoHS | Yes | Yes | Yes | Non-Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Current Continuous Drain ID 25 C | 60A (Tc) | 12A (Ta), 42.5A (Tc) | 60A (Tc) | 30A (Tc) |
| Drain to Source Voltage Vdss | 30 V | 100 V | 20 V | 30 V |
| Drive Voltage Max Rds on Min Rds on | 4.5V, 10V | 7.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Fet Type | N-Channel | N-Channel | N-Channel | P-Channel |
| Gate Charge Qg Max Vgs | 130 nC @ 10 V | 38 nC @ 10 V | 150 nC @ 10 V | 164 nC @ 10 V |
| Rds on Max ID Vgs | 1.8mOhm @ 20A, 10V | 14.4mOhm @ 15A, 10V | 1.55mOhm @ 20A, 10V | 8.5mOhm @ 10A, 10V |
| Action |
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