Vishay SIHG47N60E-GE3 MOSFETs
600V 47A N-Channel MOSFET TO-247 64mR
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG47N60E-GE3
Base Model
Detailed Description
600V 47A N-Channel MOSFET TO-247 64mR
Package
TO-247-3
Lifecycle Status
Active
Datasheet
SIHG47N60E-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHG47N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
47 A
Rds on Drain Source Resistance
64 mOhms
Vgs Gate Source Voltage
- 30 V, + 30 V
Alternate Parts Comparison (SIHG47N60E-GE3 vs SIHG47N60EF-GE3 vs SIHG47N60AEF-GE3 vs SIHG120N60E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-247-3 | TO-247-3 | TO247-3 | TO-247-3 |
| Series | E | -- | EF | E |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 82 ns | -- | 67 ns | 33 ns |
| ID Continuous Drain Current | 47 A | -- | 40 A | 25 A |
| Pd Power Dissipation | 357 W | -- | 313 W | 179 W |
| Qg Gate Charge | 148 nC | -- | 189 nC | 45 nC |
| Rds on Drain Source Resistance | 64 mOhms | -- | 70 mOhms | 120 mOhms |
| Action |
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