Vishay SIHG47N60AEF-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG47N60AEF-GE3
Base Model
Detailed Description
Power Field-Effect Transistor,
Package
TO247-3
Lifecycle Status
Active
Datasheet
SIHG47N60AEF-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIHG47N60AEF-GE3 MOSFETs technical specifications.
General
Series
EF
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
40 A
Rds on Drain Source Resistance
70 mOhms
Alternate Parts Comparison (SIHG47N60AEF-GE3 vs SIHG47N60EF-GE3 vs SIHG47N60E-GE3 vs SIHG73N60E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Compliant |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 |
| Fall Time | 67 ns | -- | 82 ns | 120 ns |
| Package | TO247-3 | TO-247-3 | TO-247-3 | -- |
| Rise Time | 63 ns | -- | 72 ns | 105 ns |
| Technology | Si | -- | Si | MOSFET (Metal Oxide) |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
