Vishay SIHG039N60EF-GE3 MOSFETs
Power Field-Effect Transistor,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG039N60EF-GE3
Base Model
Detailed Description
Power Field-Effect Transistor,
Package
TO-247-3
Lifecycle Status
Active
Datasheet
SIHG039N60EF-GE3 Datasheet
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Technical Specifications
Vishay SIHG039N60EF-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Package
TO-247-3
Alternate Parts Comparison (SIHG039N60EF-GE3 vs SIHG039N60E-GE3 vs SIHG120N60E-GE3 vs SIHG20N50C-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | -- | Through Hole | Through Hole | Through Hole |
| Number of Channels | -- | 1 Channel | 1 Channel | 1 Channel |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| Fall Time | -- | 94 ns | 33 ns | 44 ns |
| Forward Transconductance Min | -- | 17 S | 6 S | 6.4 S |
| ID Continuous Drain Current | -- | 63 A | 25 A | 20 A |
| Pd Power Dissipation | -- | 357 W | 179 W | 250 mW |
| Qg Gate Charge | -- | 126 nC | 45 nC | 65 nC |
| Rds on Drain Source Resistance | -- | 39 mOhms | 120 mOhms | 270 mOhms |
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