Vishay SIHG039N60E-GE3 MOSFETs
Trans MOSFET N-CH 600V 63A 3-Pin(3+Tab) TO-247AC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHG039N60E-GE3
Base Model
Detailed Description
Trans MOSFET N-CH 600V 63A 3-Pin(3+Tab) TO-247AC
Package
TO-247-3
Lifecycle Status
Active
Datasheet
SIHG039N60E-GE3 Datasheet
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Technical Specifications
Vishay SIHG039N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
Through Hole
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
63 A
Rds on Drain Source Resistance
39 mOhms
Alternate Parts Comparison (SIHG039N60E-GE3 vs SIHG039N60EF-GE3 vs SIHG20N50C-E3 vs SIHG120N60E-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | -- | Through Hole | Through Hole |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| Fall Time | 94 ns | -- | 44 ns | 33 ns |
| Forward Transconductance Min | 17 S | -- | 6.4 S | 6 S |
| ID Continuous Drain Current | 63 A | -- | 20 A | 25 A |
| Pd Power Dissipation | 357 W | -- | 250 mW | 179 W |
| Qg Gate Charge | 126 nC | -- | 65 nC | 45 nC |
| Rds on Drain Source Resistance | 39 mOhms | -- | 270 mOhms | 120 mOhms |
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