Vishay SIHD2N80E-GE3 MOSFETs
Trans MOSFET N-CH 800V 2.8A 3-Pin(2+Tab) TO-252AA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHD2N80E-GE3
Base Model
Detailed Description
Trans MOSFET N-CH 800V 2.8A 3-Pin(2+Tab) TO-252AA
Package
TO-252-3
Lifecycle Status
Active
Datasheet
Quick Jump:
Technical Specifications
Vishay SIHD2N80E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
800 V
ID Continuous Drain Current
2.8 A
Rds on Drain Source Resistance
2.38 Ohms
Alternate Parts Comparison (SIHD2N80E-GE3 vs SIHD2N80AE-GE3 vs SIHD180N60E-GE3 vs IRFR420TRPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 |
| Series | E | E | E | -- |
| Mounting Type | SMD/SMT | SMD/SMT | SMD/SMT | -- |
| Operating Temperature | - 55°C ~ + 150°C | - 55°C ~ + 150°C | - 55°C ~ + 150°C | -- |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | -- |
| Channel Mode | Enhancement | Enhancement | Enhancement | -- |
| Configuration | Single | Single | Single | -- |
| Fall Time | 27 ns | 23 ns | 9 ns | -- |
| ID Continuous Drain Current | 2.8 A | 2.9 A | 19 A | -- |
| Pd Power Dissipation | 62.5 W | 62.5 W | 156 W | -- |
| Qg Gate Charge | 9.8 nC | 7 nC | 32 nC | -- |
| Action |
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