Vishay SIHD180N60E-GE3 MOSFETs
Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab ) DPAK
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIHD180N60E-GE3
Detailed Description
Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab ) DPAK
Package
TO-252-3
Lifecycle Status
Active
Datasheet
SIHD180N60E-GE3 Datasheet
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Technical Specifications
Vishay SIHD180N60E-GE3 MOSFETs technical specifications.
General
Series
E
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
600 V
ID Continuous Drain Current
19 A
Rds on Drain Source Resistance
195 mOhms
Alternate Parts Comparison (SIHD180N60E-GE3 vs IRFR420TRPBF vs IRFR9024NTRPBF vs IRFR9120NTRPBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | TO-252-3 | TO-252-3 | TO-252-3 | TO-252-3 |
| Configuration | Single | -- | -- | SINGLE WITH BUILT-IN DIODE |
| Series | E | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Fall Time | 9 ns | -- | -- | -- |
| Forward Transconductance Min | 6.5 S | -- | -- | -- |
| ID Continuous Drain Current | 19 A | -- | -- | -- |
| Pd Power Dissipation | 156 W | -- | -- | -- |
| Action |
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