Vishay SUD19N20-90-E3 MOSFETs
200V 19A N-CH MOSFET DPAK 90mR RdsOn
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SUD19N20-90-E3
Detailed Description
200V 19A N-CH MOSFET DPAK 90mR RdsOn
Package
TO-252-3
Lifecycle Status
Active
Datasheet
SUD19N20-90-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SUD19N20-90-E3 MOSFETs technical specifications.
General
Series
SUD
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
200 V
ID Continuous Drain Current
19 A
Rds on Drain Source Resistance
90 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SUD19N20-90-E3 vs SUD09P10-195-GE3 vs SUD19P06-60-GE3 vs SUD50P04-09L-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SUD | TrenchFET® | TrenchFET® | SUD |
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | SMD/SMT |
| Number of Channels | 1 Channel | 1 | 1 | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Fall Time | 60 ns | 9 ns | 30 ns | 140 ns |
| Technology | Si | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | Si |
| Rise Time | 50 ns | -- | 9 ns | 60 ns |
| Threshold Voltage | 4 V | -1 V | -3 V | -- |
| Operating Temperature | -- | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - 55°C ~ + 175°C |
| Action |
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