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Vishay SUD19N20-90-E3 MOSFETs

200V 19A N-CH MOSFET DPAK 90mR RdsOn

10,000 ActiveVishayTO-252-3$1.22
SUD19N20-90-E3 TO-252-3 package illustration

Same model may have multiple batches, images only for reference.

SUD19N20-90-E3
Manufacturer
Part Number (MPN)
SUD19N20-90-E3
Detailed Description
200V 19A N-CH MOSFET DPAK 90mR RdsOn
Package
TO-252-3
Lifecycle Status
Active
Datasheet
PDF SUD19N20-90-E3 Datasheet
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Technical Specifications

Vishay SUD19N20-90-E3 MOSFETs technical specifications.

General

Series
SUD
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
200 V
ID Continuous Drain Current
19 A
Rds on Drain Source Resistance
90 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V

Related Parts Comparison (SUD19N20-90-E3 vs SUD09P10-195-GE3 vs SUD19P06-60-GE3 vs SUD50P04-09L-E3)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
SeriesSUDTrenchFET®TrenchFET®SUD
Mounting TypeSMD/SMTSurface MountSurface MountSMD/SMT
Number of Channels1 Channel111 Channel
RoHSYesYesYesYes
Fall Time60 ns9 ns30 ns140 ns
TechnologySiMOSFET (Metal Oxide)MOSFET (Metal Oxide)Si
Rise Time50 ns--9 ns60 ns
Threshold Voltage4 V-1 V-3 V--
Operating Temperature---55°C ~ 150°C (TJ)-55°C ~ 150°C (TJ)- 55°C ~ + 175°C
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