Vishay SUD09P10-195-GE3 MOSFETs
P-CH MOSFET, -100V, -8.8A, 195mR, TO-252, SMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SUD09P10-195-GE3
Detailed Description
P-CH MOSFET, -100V, -8.8A, 195mR, TO-252, SMT
Package
TO-252-3
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SUD09P10-195-GE3 MOSFETs technical specifications.
General
Series
TrenchFET®
RoHS
Yes
Number of Channels
1
Package / Case
TO-252-3
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C (TJ)
Lifecycle Status
Active
Continuous Drain Current ID
-8.8 A
Current Continuous Drain ID 25 C
8.8A (Tc)
Drain to Source Resistance
162mR
Alternate Parts Comparison (SUD09P10-195-GE3 vs SUD50P04-09L-E3 vs SUD25N15-52-E3 vs SUD19N20-90-E3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | TrenchFET® | SUD | SUD | SUD |
| Mounting Type | Surface Mount | SMD/SMT | SMD/SMT | SMD/SMT |
| Number of Channels | 1 | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Yes | Yes | Yes |
| Fall Time | 9 ns | 140 ns | 60 ns | 60 ns |
| Technology | MOSFET (Metal Oxide) | Si | Si | Si |
| Threshold Voltage | -1 V | -- | 2 V | 4 V |
| Channel Mode | -- | Enhancement | Enhancement | Enhancement |
| Configuration | -- | Single | Single | Single |
| ID Continuous Drain Current | -- | 50 A | 25 A | 19 A |
| Package | -- | TO-252-3 | TO-252-3 | TO-252-3 |
| Pd Power Dissipation | -- | 136 W | 136 W | 136 W |
| Action |
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