Vishay SIB457EDK-T1-GE3 MOSFETs
P-CH MOSFET -20V, 6.8A, 35mR, PowerPAK SC-75
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIB457EDK-T1-GE3
Detailed Description
P-CH MOSFET -20V, 6.8A, 35mR, PowerPAK SC-75
Package
SOT-416
Lifecycle Status
Active
Datasheet
SIB457EDK-T1-GE3 Datasheet
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Technical Specifications
Vishay SIB457EDK-T1-GE3 MOSFETs technical specifications.
General
Series
SIB
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
9 A
Rds on Drain Source Resistance
29 mOhms
Alternate Parts Comparison (SIB457EDK-T1-GE3 vs SIB4316EDK-T1-GE3 vs SIB433EDK-T1-GE3 vs SIB441EDK-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIB | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Operating Temperature | - 55°C ~ + 150°C | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| Fall Time | 1.9 us | -- | -- | -- |
| Forward Transconductance Min | 16 S | -- | -- | -- |
| ID Continuous Drain Current | 9 A | -- | -- | -- |
| Package | SOT-416 | -- | -- | -- |
| Part Aliases | SIB457EDK-GE3 | -- | -- | -- |
| Action |
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