Vishay SIB452DK-T1-GE3 MOSFETs
N-CH MOSFET 190V 1.5A 2.4R SC75-6 SM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIB452DK-T1-GE3
Detailed Description
N-CH MOSFET 190V 1.5A 2.4R SC75-6 SM
Package
SOT-416
Lifecycle Status
Active
Datasheet
SIB452DK-T1-GE3 Datasheet
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Technical Specifications
Vishay SIB452DK-T1-GE3 MOSFETs technical specifications.
General
Series
SIB
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
190 V
ID Continuous Drain Current
1.5 A
Rds on Drain Source Resistance
2.4 Ohms
Vgs Gate Source Voltage
- 16 V, + 16 V
Related Parts Comparison (SIB452DK-T1-GE3 vs SIB4316EDK-T1-GE3 vs SIB433EDK-T1-GE3 vs SIB441EDK-T1-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | Surface Mount | Surface Mount | Surface Mount |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel | 1 Channel |
| RoHS | Yes | Compliant | Compliant | Compliant |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Configuration | Single | Single Quad Drain | Single | Single Quad Drain |
| Pd Power Dissipation | 13 W | 1.9 W | 13 W | 13 W |
| Qg Gate Charge | 6.5 nC | 7.5 nC | 21 nC | 33 nC |
| Rds on Drain Source Resistance | 2.4 Ohms | 57 mOhms | 105 mOhms | 21 mOhms |
| Technology | Si | Si | Si | Si |
| Transistor Polarity | N-Channel | N-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 190 V | 30 V | 20 V | 12 V |
| Series | SIB | -- | SIB | SIB |
| Action |
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