Vishay SIB452DK-T1-GE3 MOSFETs
N-CH MOSFET 190V 1.5A 2.4R SC75-6 SM
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIB452DK-T1-GE3
Detailed Description
N-CH MOSFET 190V 1.5A 2.4R SC75-6 SM
Package
SOT-416
Lifecycle Status
Active
Datasheet
SIB452DK-T1-GE3 Datasheet
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Technical Specifications
Vishay SIB452DK-T1-GE3 MOSFETs technical specifications.
General
Series
SIB
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
N-Channel
Vds Drain Source Breakdown Voltage
190 V
ID Continuous Drain Current
1.5 A
Rds on Drain Source Resistance
2.4 Ohms
Vgs Gate Source Voltage
- 16 V, + 16 V
Alternate Parts Comparison (SIB452DK-T1-GE3 vs SIB4316EDK-T1-GE3 vs SIB433EDK-T1-GE3 vs SIB441EDK-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | SIB | -- | -- | -- |
| Mounting Type | SMD/SMT | -- | -- | -- |
| Number of Channels | 1 Channel | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Configuration | Single | -- | -- | -- |
| ID Continuous Drain Current | 1.5 A | -- | -- | -- |
| Maximum Operating Temperature C | + 150 | -- | -- | -- |
| Minimum Operating Temperature C | - 55 | -- | -- | -- |
| Package | SOT-416 | -- | -- | -- |
| Pd Power Dissipation | 13 W | -- | -- | -- |
| Qg Gate Charge | 6.5 nC | -- | -- | -- |
| Action |
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