Vishay SIA923EDJ-T1-GE3 MOSFETs
Dual P-Channel JFET, 20V, 4.5A, 54mR Rds On, Surface Mount
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA923EDJ-T1-GE3
Base Model
Detailed Description
Dual P-Channel JFET, 20V, 4.5A, 54mR Rds On, Surface Mount
Package
SOT-323
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
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Technical Specifications
Vishay SIA923EDJ-T1-GE3 MOSFETs technical specifications.
General
Series
SIA
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
4.5 A
Rds on Drain Source Resistance
44 mOhms, 44 mOhms
Alternate Parts Comparison (SIA923EDJ-T1-GE3 vs SIA923EDJ-T4-GE3 vs SIA527DJ-T1-GE3 vs SIA910EDJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOT-323 | SC-70-6 | SOT-323 | SOT-323 |
| Series | SIA | SIA | -- | SIA |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | -- | 2 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Dual | Dual | -- | Dual |
| Fall Time | 10 ns, 10 ns | 10 ns | -- | 12 ns |
| Forward Transconductance Min | 11 S, 11 S | 11 S | -- | 23 S |
| ID Continuous Drain Current | 4.5 A | 4.5 A | -- | 4.5 A |
| Pd Power Dissipation | 7.8 W | 7.8 W | -- | 7.8 W |
| Qg Gate Charge | 25 nC | 25 nC | -- | 16 nC |
| Action |
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