Vishay SIA923EDJ-T4-GE3 MOSFETs
Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 EP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA923EDJ-T4-GE3
Base Model
Detailed Description
Trans MOSFET P-CH 20V 4.5A 6-Pin PowerPAK SC-70 EP
Package
SC-70-6
Lifecycle Status
Active
Datasheet
SIA923EDJ-T4-GE3 Datasheet
Quick Jump:
Technical Specifications
Vishay SIA923EDJ-T4-GE3 MOSFETs technical specifications.
General
Series
SIA
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Operating Temperature
- 55°C ~ + 150°C
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
20 V
ID Continuous Drain Current
4.5 A
Rds on Drain Source Resistance
54 mOhms
Alternate Parts Comparison (SIA923EDJ-T4-GE3 vs SIA923EDJ-T1-GE3 vs SIA466EDJ-T1-GE3 vs SIA427DJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SC-70-6 | SOT-323 | SC-70-6 | SC-70-6 |
| Series | SIA | SIA | -- | SIA |
| Mounting Type | SMD/SMT | SMD/SMT | -- | SMD/SMT |
| Number of Channels | 2 Channel | 2 Channel | -- | 1 Channel |
| Channel Mode | Enhancement | Enhancement | -- | Enhancement |
| Configuration | Dual | Dual | -- | Single |
| ID Continuous Drain Current | 4.5 A | 4.5 A | -- | 12 A |
| Pd Power Dissipation | 7.8 W | 7.8 W | -- | 19 W |
| Qg Gate Charge | 25 nC | 25 nC | -- | 50 nC |
| Rds on Drain Source Resistance | 54 mOhms | 44 mOhms, 44 mOhms | -- | 95 mOhms |
| Technology | Si | Si | -- | Si |
| Action |
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
