Vishay SIA921EDJ-T4-GE3 MOSFETs
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA921EDJ-T4-GE3
Base Model
Detailed Description
Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET,
Package
SC-70-6
Lifecycle Status
Active
Datasheet
SIA921EDJ-T4-GE3 Datasheet
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Technical Specifications
Vishay SIA921EDJ-T4-GE3 MOSFETs technical specifications.
General
RoHS
Yes
Package
SC-70-6
Related Parts Comparison (SIA921EDJ-T4-GE3 vs SIA921EDJ-T1-GE3 vs SIA461DJ-T1-GE3 vs SIA414DJ-T1-GE3)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SC-70-6 | -- | SC-70-6 | SC-70-6 |
| Series | -- | TrenchFET® | SIA | SIA |
| Mounting Type | -- | Surface Mount | SMD/SMT | SMD/SMT |
| Number of Channels | -- | 2 | 1 Channel | 1 Channel |
| Fall Time | -- | 10 ns | 20 ns | 20 ns |
| Rise Time | -- | 12 ns | 22 ns | 10 ns |
| Action |
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