Vishay SIA421DJ-T1-GE3 MOSFETs
P-CH MOSFET 30V 7.9A 35mR SC-70 SMT
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SIA421DJ-T1-GE3
Detailed Description
P-CH MOSFET 30V 7.9A 35mR SC-70 SMT
Package
SC-70-6
Lifecycle Status
Active
Datasheet
SIA421DJ-T1-GE3 Datasheet
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Technical Specifications
Vishay SIA421DJ-T1-GE3 MOSFETs technical specifications.
General
Series
SIA
RoHS
Yes
Number of Channels
1 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
30 V
ID Continuous Drain Current
12 A
Rds on Drain Source Resistance
35 mOhms
Vgs Gate Source Voltage
- 10 V, + 10 V
Alternate Parts Comparison (SIA421DJ-T1-GE3 vs SIA466EDJ-T1-GE3 vs SIA429DJT-T1-GE3 vs SIA427DJ-T1-GE3)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Package | SC-70-6 | SC-70-6 | SC-70-6 | SC-70-6 |
| Series | SIA | -- | SIA | SIA |
| Mounting Type | SMD/SMT | -- | SMD/SMT | SMD/SMT |
| Number of Channels | 1 Channel | -- | 1 Channel | 1 Channel |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Configuration | Single | -- | Single | Single |
| ID Continuous Drain Current | 12 A | -- | 12 A | 12 A |
| Maximum Operating Temperature C | + 150 | -- | + 150 | + 150 |
| Minimum Operating Temperature C | - 55 | -- | - 55 | - 55 |
| Pd Power Dissipation | 19 W | -- | 3.5 W | 19 W |
| Qg Gate Charge | 19 nC | -- | 62 nC | 50 nC |
| Action |
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