Vishay SI4948BEY-T1-E3 MOSFETs
P-Channel JFET, 60V, 2.4A ID, 120mR Rds(on), SO Package
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI4948BEY-T1-E3
Base Model
Detailed Description
P-Channel JFET, 60V, 2.4A ID, 120mR Rds(on), SO Package
Package
SOIC-8
Lifecycle Status
Active
Datasheet
SI4948BEY-T1-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI4948BEY-T1-E3 MOSFETs technical specifications.
General
Series
SI4
RoHS
Yes
Number of Channels
2 Channel
Mounting Type
SMD/SMT
Technology
Si
Transistor Polarity
P-Channel
Vds Drain Source Breakdown Voltage
60 V
ID Continuous Drain Current
3.1 A
Rds on Drain Source Resistance
120 mOhms
Vgs Gate Source Voltage
- 20 V, + 20 V
Alternate Parts Comparison (SI4948BEY-T1-E3 vs SI4948BEY-T1-GE3 vs SIP32461DB-T2-GE1 vs SIP32454DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | SMD/SMT | SMD/SMT | Surface Mount | Surface Mount |
| RoHS | Yes | Yes | Yes | Yes |
| Package | SOIC-8 | 8-SOIC | UFBGA-4 | UFBGA-4 |
| Series | SI4 | SI4 | SIP324x1 | -- |
| Maximum Operating Temperature C | + 175 | + 175 | + 85 | -- |
| Minimum Operating Temperature C | - 55 | - 55 | - 40 | -- |
| Pd Power Dissipation | 2.4 W | 2.4 W | 300 mW | -- |
| Unit Weight | 0.026455 oz | 0.026455 oz | 0.002420 oz | -- |
| Action |
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