STMicroelectronics STPSC6H065BY-TR Rectifier Diodes
Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
STPSC6H065BY-TR
Base Model
Detailed Description
Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
STPSC6H065BY-TR Datasheet
Quick Jump:
Technical Specifications
STMicroelectronics STPSC6H065BY-TR Rectifier Diodes technical specifications.
General
Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Description
DIODE SIL CARBIDE 650V 6A DPAK
Detailed Description
Diode 650 V 6A Surface Mount DPAK
Current Reverse Leakage Vr
60 µA @ 650 V
Capacitance Vr F
300pF @ 0V, 1MHz
Grade
Automotive
Qualification
AEC-Q101
Technology
SiC (Silicon Carbide) Schottky
Alternate Parts Comparison (STPSC6H065BY-TR vs STPSC6H065DI vs STPSC6H065G-TR vs STPSC6H065D)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-252-3, DPAK | TO-220-2 Insulated, TO-220AC | TO-263-3, D2PAK | TO-220-2 |
| Mounting Type | Surface Mount | Through Hole | Surface Mount | Through Hole |
| Lifecycle Status | Active | Active | Active | Active |
| Current Average Rectified IO | 6A | 6A | 6A | 6A |
| Current Reverse Leakage Vr | 60 µA @ 650 V | 60 µA @ 650 V | 60 µA @ 650 V | 60 µA @ 650 V |
| Description | DIODE SIL CARBIDE 650V 6A DPAK | DIODE SIC 650V 6A TO220AC INS | DIODE SIL CARBIDE 650V 6A D2PAK | DIODE SIL CARB 650V 6A TO220AC |
| Detailed Description | Diode 650 V 6A Surface Mount DPAK | Diode 650 V 6A Through Hole TO-220AC ins | Diode 650 V 6A Surface Mount D2PAK | Diode 650 V 6A Through Hole TO-220AC |
| Operating Temperature Junction | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C | -40°C ~ 175°C |
| Speed | Zero Recovery Time > 500mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Zero Recovery Time > 500mA (Io) | Zero Recovery Time > 500mA (Io) |
| Technology | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky | SiC (Silicon Carbide) Schottky |
| Voltage Dc Reverse Vr Max | 650 V | 650 V | 650 V | 650 V |
| Capacitance Vr F | 300pF @ 0V, 1MHz | -- | 300pF @ 0V, 1MHz | 300pF @ 0V, 1MHz |
| Action |
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