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STMicroelectronics STPSC6H065BY-TR Rectifier Diodes

Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode

7 ActiveSTMicroelectronicsSTPSC6H065TO-252-3, DPAK (2 Leads + Tab), SC-63$5.81
STPSC6H065BY-TR TO-252-3, DPAK (2 Leads + Tab), SC-63 package illustration

Same model may have multiple batches, images only for reference.

STPSC6H065BY-TR
Manufacturer
Part Number (MPN)
STPSC6H065BY-TR
Base Model
Detailed Description
Automotive 650 V, 6 A High Surge Silicon Carbide Power Schottky Diode
Package
TO-252-3, DPAK (2 Leads + Tab), SC-63
Lifecycle Status
Active
Datasheet
PDF STPSC6H065BY-TR Datasheet
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Ordering Code Family

STPSC6H065 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

4 ordering variants listed on the family page.

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Technical Specifications

STMicroelectronics STPSC6H065BY-TR Rectifier Diodes technical specifications.

General

Package / Case
TO-252-3, DPAK
Mounting Type
Surface Mount
Lifecycle Status
Active
Current Reverse Leakage Vr
60 µA @ 650 V
Capacitance Vr F
300pF @ 0V, 1MHz
Grade
Automotive
Qualification
AEC-Q101
Technology
SiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max
650 V
Current Average Rectified IO
6A

Related Parts Comparison (STPSC6H065BY-TR vs STPSC6H065DI vs STPSC6H065G-TR vs STPSC6H065D)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseTO-252-3, DPAKTO-220-2 Insulated, TO-220ACTO-263-3, D2PAKTO-220-2
Mounting TypeSurface MountThrough HoleSurface MountThrough Hole
Lifecycle StatusActiveActiveActiveActive
Current Average Rectified IO6A6A6A6A
Current Reverse Leakage Vr60 µA @ 650 V60 µA @ 650 V60 µA @ 650 V60 µA @ 650 V
Operating Temperature Junction-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C-40°C ~ 175°C
SpeedZero Recovery Time > 500mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Zero Recovery Time > 500mA (Io)Zero Recovery Time > 500mA (Io)
TechnologySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) SchottkySiC (Silicon Carbide) Schottky
Voltage Dc Reverse Vr Max650 V650 V650 V650 V
Capacitance Vr F300pF @ 0V, 1MHz--300pF @ 0V, 1MHz300pF @ 0V, 1MHz
GradeAutomotiveIndustrial--Industrial
Reverse Recovery Time Trr0 ns--0 ns0 ns
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